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IS62WV25616BLL-55BLI

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLLarehighspeed,lowpower,4MbitSRAMsorganizedas256Kwordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshighperformanceand

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS62WV25616BLL-55BLI

包装:托盘 封装/外壳:48-TFBGA 类别:集成电路(IC) 存储器 描述:IC SRAM 4MBIT PARALLEL 48MINIBGA

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS62WV25616BLL-55BLI-TR

包装:管件 封装/外壳:48-TFBGA 类别:集成电路(IC) 存储器 描述:IC SRAM 4MBIT PARALLEL 48MINIBGA

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS62WV25616BLL-55BI

256Kx16LOWVOLTAGE,ULTRALOWPOWERCMOSSTATICSRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLLarehighspeed,lowpower,4MbitSRAMsorganizedas256Kwordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshighperformanceand

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS62WV25616BLL-55T

256Kx16LOWVOLTAGE,ULTRALOWPOWERCMOSSTATICSRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLLarehighspeed,lowpower,4MbitSRAMsorganizedas256Kwordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshighperformanceand

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS62WV25616BLL-55TI

256Kx16LOWVOLTAGE,ULTRALOWPOWERCMOSSTATICSRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLLarehighspeed,lowpower,4MbitSRAMsorganizedas256Kwordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshighperformanceand

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS62WV25616BLL-55TLI

256Kx16LOWVOLTAGE,ULTRALOWPOWERCMOSSTATICSRAM

DESCRIPTION TheISSIIS62WV25616ALL/IS62WV25616BLLarehighspeed,lowpower,4MbitSRAMsorganizedas256Kwordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshighperformanceand

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

产品属性

  • 产品编号:

    IS62WV25616BLL-55BLI

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 异步

  • 存储容量:

    4Mb(256K x 16)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    55ns

  • 电压 - 供电:

    2.5V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    48-TFBGA

  • 供应商器件封装:

    48-TFBGA(6x8)

  • 描述:

    IC SRAM 4MBIT PARALLEL 48MINIBGA

供应商型号品牌批号封装库存备注价格
ISSI
2008
BGA
1
厂家指定一级分销全新原装现货价
询价
ISSI
10+
MBGA
3160
原包原装现货,专注ARM内存闪存等芯片
询价
ISSI原装正品专卖价格
23+
BGA
9231
专注原装正品现货特价中量大可定
询价
ISSI
20+21+
BGA(SRAM)
400
全新原装正品
询价
ISSI
22+
BGA48
7500
只做原装正品假一赔十!正规渠道订货!
询价
ISSI
23+
BGA
1896
原包装原标签特价销售
询价
ISSI
24+
BGA48
13500
免费送样原盒原包现货一手渠道联系
询价
ISSI
23+
48-迷你型BGA(6x8)
39257
专业分销产品!原装正品!价格优势!
询价
ISSI
23+
QFN
9280
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
ISSI
2020+
BGA
2112
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多IS62WV25616BLL-55BLI供应商 更新时间2024-10-31 17:32:00