DESCRIPTION

The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology.

WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CMOS input levels.

Easy memory expansion is provided by using an active LOW Chip Select (CS) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory.

The IS62C256 is pin compatible with other 32K x 8 SRAMs in plastic SOP or TSOP (Type I) package.

FEATURES

• Access time: 45, 70 ns

• Low active power: 200 mW (typical)

• Low standby power

— 250 µW (typical) CMOS standby

— 28 mW (typical) TTL standby

• Fully static operation: no clock or refresh required

• TTL compatible inputs and outputs

• Single 5V power supply

IS62C256属于集成电路（IC） > 存储器。ISSI有限公司制造生产的IS62C256存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。