DESCRIPTION

TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

HIGH SPEED: (IS61/64WV12816DALL/DBLL)

• High-speed access time: 8, 10, 12, 20 ns

• Low Active Power: 135 mW (typical)

• Low Standby Power: 12 μW (typical) CMOS standby

LOW POWER: (IS61/64WV12816DALS/DBLS)

• High-speed access time: 25, 35 ns

• Low Active Power: 55 mW (typical)

• Low Standby Power: 12 μW (typical) CMOS standby

• Single power supply

— VDD 1.65V to 2.2V (IS61WV12816DAxx)

— VDD 2.4V to 3.6V (IS61/64WV12816DBxx)

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperature support

• Lead-free available

IS61WV12816DBLL-10BLI属于集成电路（IC） > 存储器。ISSI有限公司制造生产的IS61WV12816DBLL-10BLI存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。