DESCRIPTION

The 18 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 72 bits, 512K words by 36 bits and 1M words by 18 bits, fabricated with ISSIs advanced CMOS technology.

FEATURES

• 100 percent bus utilization

• No wait cycles between Read and Write

• Internal self-timed write cycle

• Individual Byte Write Control

• Single R/W (Read/Write) control pin

• Clock controlled, registered address, data and control

• Interleaved or linear burst sequence control using MODE input

• Three chip enables for simple depth expansion and address pipelining

• Power Down mode

• Common data inputs and data outputs

• CKE pin to enable clock and suspend operation

• JEDEC 100-pin TQFP, 165-ball PBGA and 209- ball (x72) PBGA packages

• Power supply:

NVP: VDD 2.5V (± 5), VDDQ 2.5V (± 5)

NLP: VDD 3.3V (± 5), VDDQ 3.3V/2.5V (± 5)

• JTAG Boundary Scan for PBGA packages

• Industrial temperature available

• Lead-free available

IS61NLP51236-250B3I属于集成电路（IC） > 存储器。ISSI有限公司制造生产的IS61NLP51236-250B3I存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。