DESCRIPTION

The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabricated with ISSIs advanced CMOS technology.

FEATURES

• 100 percent bus utilization

• No wait cycles between Read and Write

• Internal self-timed write cycle

• Individual Byte Write Control

• Single R/W (Read/Write) control pin

• Clock controlled, registered address, data and control

• Interleaved or linear burst sequence control using MODE input

• Three chip enables for simple depth expansion and address pipelining

• Power Down mode

• Common data inputs and data outputs

• CKE pin to enable clock and suspend operation

• JEDEC 100-pin TQFP, 165-ball PBGA and 119- ball PBGA packages

• Power supply:

NVP: VDD 2.5V (± 5), VDDQ 2.5V (± 5)

NLP: VDD 3.3V (± 5), VDDQ 3.3V/2.5V (± 5)

• JTAG Boundary Scan for PBGA packages

• Industrial temperature available

• Lead-free available

IS61NLP25636A-200B3I属于集成电路（IC） > 存储器。ISSI有限公司制造生产的IS61NLP25636A-200B3I存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。