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IS61LV6416-8TL-TR	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：44-TSOP（0.400"，10.16mm 宽）类别：集成电路（IC）存储器描述：IC SRAM 1MBIT PARALLEL 44TSOP II	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司	ISSI
IC61LV6416-8B	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IC61LV6416-8BI	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IC61LV6416-8K	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IC61LV6416-8KI	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IC61LV6416-8T	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IC61LV6416-8TI	文件：95.44 Kbytes Page：9 Pages	64Kx16HightSpeedSRAMwith3.3V DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-8B	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-8BI	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-8BI	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司	ISSI
IS61LV6416-8K	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-8KI	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-8KL	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司	ISSI
IS61LV6416-8T	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司	ISSI
IS61LV6416-8T	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-8TI	文件：452.42 Kbytes Page：8 Pages	64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl	ICSI 矽成	ICSI
IS61LV6416-8TI	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司	ISSI
IS61LV6416-8TL	文件：146.94 Kbytes Page：16 Pages	64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas	ISSIIntegrated Silicon Solution Inc ISSI公司ISSI有限公司	ISSI

产品属性

产品编号：
IS61LV6416-8TL-TR
制造商：
ISSI, Integrated Silicon Solution Inc
类别：
集成电路（IC） > 存储器
包装：
托盘
存储器类型：
易失
存储器格式：
SRAM
技术：
SRAM - 异步
存储容量：
1Mb（64K x 16）
存储器接口：
并联
写周期时间 - 字，页：
8ns
电压 - 供电：
3.135V ~ 3.6V
工作温度：
0°C ~ 70°C（TA）
安装类型：
表面贴装型
封装/外壳：
44-TSOP（0.400"，10.16mm 宽）
供应商器件封装：
44-TSOP II
描述：
IC SRAM 1MBIT PARALLEL 44TSOP II

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	IS61LV6416-8TL-TR	ISSI	23+	44-TSOPII	1389	专业分销产品!原装正品!价格优势!	询价
深圳市百视威讯电子科技有限公司	IS61LV6416-8TL-TR		23+	N/A	35800	正品授权货源可靠	询价
瀚佳科技(深圳)有限公司	IS61LV6416-8TL-TR	ISSI, Integrated Silicon Solut	21+	44-TSOP II	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS61LV6416-8TL-TR	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	IS61LV6416-8TL-TR	ISSI	20+	TSOP-44	1000	就找我吧!--邀您体验愉快问购元件!	询价
深圳市汇莱威科技有限公司	IS61LV6416-8TL-TR	ISSI		TSOP44	265209	假一罚十原包原标签常备现货!	询价
深圳市恒意法电子有限公司	IS61LV6416-8TL-TR	ISSI, Integrated Silicon Solut	21+	44-TSOP(0.400,10.16mm 宽)	6000	正规渠道/品质保证/原装正品现货	询价
深圳市威尔健半导体有限公司	IS61LV6416-8TL-TR	ISSI	23+	TSOP44	50000	全新原装正品现货,支持订货	询价
深圳市振鑫微电子科技有限公司	IS61LV6416-8TL-TR	ISN	23+		589610	新到现货原厂一手货源价格秒杀代理!	询价
京海半导体(深圳)有限公司	IS61LV6416-8TL-TR	ISSI	21+	TSOP44	10000	原装现货假一罚十	询价

更多IS61LV6416-8TL-TR供应商更新时间2024-5-22 8:35:00

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