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IS43TR16256A-15HBLI集成电路(IC)存储器规格书PDF中文资料
厂商型号 |
IS43TR16256A-15HBLI |
参数属性 | IS43TR16256A-15HBLI 封装/外壳为96-TFBGA;包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC DRAM 4GBIT PARALLEL 96TWBGA |
功能描述 | 512Mx8, 256Mx16 4Gb DDR3 SDRAM |
文件大小 |
3.94166 Mbytes |
页面数量 |
88 页 |
生产厂商 | Integrated Silicon Solution Inc |
企业简称 |
ISSI【ISSI公司】 |
中文名称 | ISSI有限公司官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-6-1 23:00:00 |
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IS43TR16256A-15HBLI规格书详情
FEATURES
● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
● High speed data transfer rates with system frequency up to 1066 MHz
● 8 internal banks for concurrent operation
● 8n-Bit pre-fetch architecture
● Programmable CAS Latency
● Programmable Additive Latency: 0, CL-1,CL-2
● Programmable CAS WRITE latency (CWL) based on tCK
● Programmable Burst Length: 4 and 8
● Programmable Burst Sequence: Sequential or Interleave
● BL switch on the fly
● Auto Self Refresh(ASR)
● Self Refresh Temperature(SRT)
● Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
● Partial Array Self Refresh
● Asynchronous RESET pin
● TDQS (Termination Data Strobe) supported (x8 only)
● OCD (Off-Chip Driver Impedance Adjustment)
● Dynamic ODT (On-Die Termination)
● Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
● Write Leveling
● Up to 200 MHz in DLL off mode
● Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)
IS43TR16256A-15HBLI属于集成电路(IC) > 存储器。ISSI有限公司制造生产的IS43TR16256A-15HBLI存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。
产品属性
- 产品编号:
IS43TR16256A-15HBLI
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
易失
- 存储器格式:
DRAM
- 技术:
SDRAM - DDR3
- 存储容量:
4Gb(256M x 16)
- 存储器接口:
并联
- 写周期时间 - 字,页:
15ns
- 电压 - 供电:
1.425V ~ 1.575V
- 工作温度:
-40°C ~ 95°C(TC)
- 安装类型:
表面贴装型
- 封装/外壳:
96-TFBGA
- 供应商器件封装:
96-TWBGA(9x13)
- 描述:
IC DRAM 4GBIT PARALLEL 96TWBGA
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ISSI |
23+ |
NA/ |
3270 |
原装现货,当天可交货,原型号开票 |
询价 | ||
ISSI |
2018+ |
NA |
6000 |
全新原装正品现货,假一赔佰 |
询价 | ||
ISSI |
24+ |
BGA96 |
98000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
ISSI |
18+ |
BGA96 |
350 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ISSI |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
询价 | ||
ISSI |
2022+ |
FBGA |
5961 |
询价 | |||
ISSI |
22+ |
BGA |
9850 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
ISSI |
2021+ |
BGA |
30000 |
全新原装现货热卖 |
询价 | ||
ISSI特价 |
BGA96 |
58209 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | |||
ISSI-矽成 |
24+25+/26+27+ |
BGA-96 |
2368 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |