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IS42SM81600E中文资料PDF规格书
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IS42SM81600E规格书详情
DESCRIPTION
ISSIs 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 128Mb Mobile Synchronous DRAM is designed to minimize current consumption making it ideal for low-power applications. Both TSOP and BGA packages are offered, including industrial grade products.
FEATURES
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access and precharge
• Programmable CAS latency: 2, 3
• Programmable Burst Length: 1, 2, 4, 8, and Full Page
• Programmable Burst Sequence:
• Sequential and Interleave
• Auto Refresh (CBR)
• TCSR (Temperature Compensated Self Refresh)
• PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full
• Deep Power Down Mode (DPD)
• Driver Strength Control (DS): 1/4, 1/2, and Full
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ISSI |
1011 |
15 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | |||
ISSI |
22+ |
FBGA-54 |
41943 |
原厂原装,价格优势!13246658303 |
询价 | ||
ISSI |
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | |||
ISSI |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
ISSI |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
ISSI |
2021+ |
BGA |
7398 |
原装正品假一罚十 |
询价 | ||
ISSI Integrated Silicon Soluti |
22+ |
54TFBGA (8x13) |
9000 |
原厂渠道,现货配单 |
询价 | ||
ISSI, Integrated Silicon Solut |
21+ |
54-TFBGA |
15000 |
正规渠道/品质保证/原装正品现货 |
询价 | ||
ISSI |
BGA |
70230 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | |||
ISSI |
21+ROHS |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |