OVERVIEW

ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

FEATURES

• Clock frequency: 166, 143, 133 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Internal bank for hiding row access/precharge

• Power supply

Vdd Vddq

IS42/45S16320B 3.3V 3.3V

IS42S86400B 3.3V 3.3V

• LVTTL interface

• Programmable burst length

– (1, 2, 4, 8, full page)

• Programmable burst sequence: Sequential/Interleave

• Auto Refresh (CBR)

• Self Refresh

• 8K refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

• Available in 54-pin TSOP-II and 54-ball W-BGA (x16 only)

• Operating Temperature Range:

Commercial: 0°C to +70°C

Industrial: -40°C to +85°C

Automotive, A1: -40°C to +85°C

IS42S86400B-7TLI属于集成电路（IC） > 存储器。ISSI有限公司制造生产的IS42S86400B-7TLI存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。