首页>IRS2118PBF>规格书详情
IRS2118PBF中文资料PDF规格书
IRS2118PBF规格书详情
Description
The IRS2117, IRS21171, and IRS2118 are high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600 V.
IC Features
• Floating channel designed for bootstrap operation
• Fully operational to +600V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20V
• Undervoltage lockout
• CMOS Schmitt-triggered inputs with pull-down
• Output in phase with input
• RoHS compliant
• IRS2117 and IRS2118 available in PDIP8
产品属性
- 产品编号:
IRS2118PBF
- 制造商:
Infineon Technologies
- 类别:
集成电路(IC) > 栅极驱动器
- 包装:
卷带(TR)
- 驱动配置:
高端
- 通道类型:
单路
- 栅极类型:
IGBT,N 沟道 MOSFET
- 电压 - 供电:
10V ~ 20V
- 逻辑电压 - VIL,VIH:
6V,9.5V
- 电流 - 峰值输出(灌入,拉出):
290mA,600mA
- 输入类型:
反相
- 上升/下降时间(典型值):
75ns,35ns
- 工作温度:
-40°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
8-DIP(0.300",7.62mm)
- 供应商器件封装:
8-PDIP
- 描述:
IC GATE DRVR HIGH-SIDE 8DIP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2016+ |
DIP8 |
2283 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
IR |
DIP8 |
23+ |
11075 |
专营厂家量大可定货 |
询价 | ||
InternationRectifer |
22+ |
NA |
30000 |
100%全新原装 假一赔十 |
询价 | ||
Infineon |
2021+ |
SOIC |
57500 |
科研单位合格供应商!现货库存 |
询价 | ||
INFINEON/英飞凌 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
23+ |
8-DIP |
8238 |
询价 | |||
INFINEON/英飞凌 |
23+ |
DIP-8 |
9000 |
只做原装只有原装假一罚百可开增值税票 |
询价 | ||
INFINEON/IR |
23+ |
NA |
6000 |
可订货,请确认 |
询价 | ||
INFINEON/IR |
21+ |
NA |
12820 |
只做原装,质量保证 |
询价 |