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HRF3205S

100A,55V,0.008Ohm,N-Channel,PowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IIRF3205

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIRF3205Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF3205

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

IRF3205

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF3205

AdvancedProcessTechnologyUltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3205

N-ChannelTrenchProcessPowerMOSFETTransistor

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

IRF3205

HEXFETPowerMOSFET

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF3205

PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A??

FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthe

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3205

PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A??

VDSS=55V RDS(on)=8.0mΩ ID=110A… Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3205

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

IRF3205DD

N-ChannelPowerMOSFET(55V/110A)

FS

First Silicon Co., Ltd

IRF3205L

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3205L

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3205L

PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A??

VDSS=55V RDS(on)=8.0mΩ ID=110A… Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3205L

HEXFETPowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3205PBF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3205PBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3205S

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3205S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
IR
24+
N/A
90000
一级代理商进口原装现货、价格合理
询价
IR
22+
N/A
6000
终端可免费供样,支持BOM配单
询价
IR
23+
N/A
8000
只做原装现货
询价
IR
08+(pbfree)
TO-220-3
8866
询价
IR
2015+
TO-220AB
12500
全新原装,现货库存长期供应
询价
IR
16+
TO-220
10000
全新原装现货
询价
IR
23+
TO-220
35890
询价
IR
16+
原厂封装
2000
原装现货假一罚十
询价
IR
23+
TO-220AB
8600
全新原装现货
询价
IR
2016+
TO-220
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多IRL3205S供应商 更新时间2024-6-6 15:11:00