首页 >IRGP4760DPBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRGP4760DPBF | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | |
IRGP4760DPBF | 包装：管件 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V TO-247 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerTransformersChFrame | FILTRAN FILTRAN Group | FILTRAN | ||
Heyco®OriginalSeries-35LiquidTightCordgrips | Heyco Heyco | Heyco | ||
PERSONALNAVIGATIONSYSTEM-ON-CHIP FEATURES •ProcessorCore •500MHzARM1136JF-S™ •500MHzVectorFloatingPointUnit •L1cache:32KB/32KB(D/I) •ScratchRAM:64KB •MemorySubsystem •Supportsupto166MHzmobileSDRandmobileDDR(16-or 32-bit) •Storage •SLC/MLCNANDmemorycontroller •Directsecureboot | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM | ||
SiliconZ–Diodes | VishayVishay Siliconix 威世科技 | Vishay | ||
ZENERDIODECHIPS •ZENERDIODECHIPS •ALLJUNCTIONSCOMPLETELYPROTECTEDWITHSILICONDIOXIDE •ELECTRICALLYEQUIVALENTTO1N4728ATHRU1N4764A •1WATTCAPABILITYWITHPROPERHEATSINKING •COMPATIBLEWITHALLWIREBONDINGANDDIEATTACHTECHNIQUES,WITHTHEEXCEPTIONOFSOLDERREFLOW | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
1WATTZENERDIODES •1WATTZENERDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
1.0WZENERDIODE5TOLERANCE DESCRIPTION: TheCENTRALSEMICONDUCTORCLL4728ASeriesSiliconZenerDiodeisahighqualityvoltageregulatorforuseinsurfacemountindustrial,commercial,entertainmentandcomputerapplications. MARKING:CATHODEBAND | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTSILICONZENERDIODE1WATT,3.3THRU100VOLTS DESCRIPTION: TheCENTRALSEMICONDUCTORCLL4728ASeriesSiliconZenerDiodeisahighqualityvoltageregulatorforuseinsurfacemountindustrial,commercial,entertainmentandcomputerapplications. MARKING:CATHODEBAND | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTZENERDIODE Voltage:10-100VoltsPower:1.0Watts FEATURES -Forsurfacemountedapplicationsinordertooptimizeboardspace -Lowprofilepackage -Built-instrainrelief -Glasspassivatedjunction -Lowinductance -TypicalIRlessthan5.0uUAabove11V -Hightemperaturesoldering:260°C/10 | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SURFACEMOUNTZENERDIODE Voltage:10-100VoltsPower:1.0Watts FEATURES -Forsurfacemountedapplicationsinordertooptimizeboardspace -Lowprofilepackage -Built-instrainrelief -Glasspassivatedjunction -Lowinductance -TypicalIRlessthan5.0uUAabove11V -Hightemperaturesoldering:260°C/10 | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDZenerDiode Features -Glasspassivatedchip. -Lowleakage. -Foruseinstabilizingandclippingwithhighpowerrating. -Built-instrainrelief. -Lowinductance. -Highpeakreversepowerdissipation. Mechanicaldata -Case:JEDECDO-214AC,moldedplastic. -Epoxy:UL94V-0rateflameretardant. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDZenerDiode Features -Glasspassivatedchip. -Lowleakage. -Foruseinstabilizingandclippingwithhighpowerrating. -Built-instrainrelief. -Lowinductance. -Highpeakreversepowerdissipation. Mechanicaldata -Case:JEDECDO-214AC,moldedplastic. -Epoxy:UL94V-0rateflameretardant. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDZenerDiode Features -Glasspassivatedchip. -Lowleakage. -Foruseinstabilizingandclippingwithhighpowerrating. -Built-instrainrelief. -Lowinductance. -Highpeakreversepowerdissipation. Mechanicaldata -Case:JEDECDO-214AC,moldedplastic. -Epoxy:UL94V-0rateflameretardant. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDZenerDiode Voltage:3.3to100Volts Power:1.0Watts RoHSDevice Features -Batchprocessdesign,excellentpowerdissipation offersbetterreverseleakagecurrentandthermal resistance. -Standardzenervoltagetolerance±5. -Lowinductance. -Lowprofilepackage. -Built-instrainrelief | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SurfaceMountZenerDiodes Features SiliconPlanarPowerZenerDiodes Foruseinstabilizingandclippingcircuitswithhigherpowerrating. StandardZenervoltagetoleranceis±10.Addsuffix“A”for±5tolerance. OtherZenervoltagesandtolerancesareavailableuponrequest. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
1WattZenerDiode3.3to100Volts Features •WideVoltageRangeAvailable •GlassPackage •HighTempSoldering:260°Cfor10SecondsAtTerminals •ForSurfaceMountApplications | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
ZENERDIODES POWERDISSIPATION:1.0W FEATURES Siliconplanarpowerzenerdiodes Foruseinstabilizingandclippingcircuitswithhighpowerrating. Standardzenervoltagetoleranceis±10.AddsuffixAfor±5tolerance.otherzenervoltageandtolerancesareavailableuponrequest. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN |
产品属性
- 产品编号：
IRGP4760DPBF
- 制造商：
Infineon Technologies
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
管件
- 不同 Vge、Ic 时 Vce(on)（最大值）：
2V @ 15V，48A
- 开关能量：
1.7mJ（开），1mJ（关）
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
70ns/140ns
- 测试条件：
400V，48A，10 欧姆，15V
- 工作温度：
-40°C ~ 175°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-247-3
- 供应商器件封装：
TO-247AC
- 描述：
IGBT 650V TO-247
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
InfineonTechnologies |
2019+ |
TO-247AC |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
INFINEON |
2019 |
TO-247 |
55000 |
原装进口假一罚十 |
询价 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
INFINEON |
1503+ |
TO-247 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Infineon Technologies |
22+ |
TO247AC |
9000 |
原厂渠道,现货配单 |
询价 | ||
Infineon Technologies |
21+ |
TO247AC |
13880 |
公司只售原装,支持实单 |
询价 | ||
Infineon Technologies |
23+ |
TO247AC |
9000 |
原装正品，支持实单 |
询价 | ||
IR |
14+ |
TO-247 |
25 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
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