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IRG7S313UPBF中文资料PDF规格书
IRG7S313UPBF规格书详情
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on)and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
Features
• Advanced Trench IGBT Technology
• Optimized for Sustain and Energy Recovery
circuits in PDP applications
• Low VCE(on) and Energy per Pulse (EPULSE™)
for improved panel efficiency
• High repetitive peak current capability
• Lead Free package
产品属性
- 型号：
IRG7S313UPBF
- 功能描述：
IGBT 晶体管 330V PDP TRENCH IGBT Ultrafast 8 - 30 kHz
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集电极—发射极最大电压
- VCEO：
650 V
- 集电极—射极饱和电压：
2.3 V
- 栅极/发射极最大电压：
20 V 在25
- C的连续集电极电流：
150 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
187 W
- 封装/箱体：
TO-247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
14+ |
TO-263 |
5600 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
TO-263 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
IR |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | |||
VISHAY-威世 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IR |
2023+ |
TO-263 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
IR |
23+ |
D2PAK |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IR |
22+ |
D2PAK |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
IR |
23+ |
D2PAK |
8000 |
只做原装现货 |
询价 | ||
Infineon Technologies |
2022+ |
D2PAK |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IR |
23+ |
SMD |
6000 |
只有原装正品,老板发话合适就出 |
询价 |
