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IRG4PC30

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30F

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

FastCoPackIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT

VCES=600V VCE(on)typ.=1.59V @VGE=15V,IC=17A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30K

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhighereffi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgen

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30KDPBF

INSULATED GATE BIPOALR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packaged

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30KPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevio

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30S

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

StandardSpeedIGBT Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30SPBF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

UltraFastSpeedIGBT Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ult

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30UPBF

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

UltraFastSpeedIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Benefits •Genera

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30W

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30WPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30F

Fit Rate / Equivalent Device Hours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30FD

Fit Rate / Equivalent Device Hours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30FDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

详细参数

  • 型号:

    IRG4PC30

  • 制造商:

    IRF

  • 制造商全称:

    International Rectifier

  • 功能描述:

    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

供应商型号品牌批号封装库存备注价格
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
22+
TO-247
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-247
8000
只做原装现货
询价
IR
23+
1018
TO-247
询价
IR
07+/08+
TO-247-3
1199
询价
IR
2017+
TO-247
21546
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
IR
2016+
TO-247
6000
公司只做原装,假一罚十,可开17%增值税发票!
询价
IR
23+
TO-3P
18000
询价
IR
04+
原厂原装
800
自己公司全新库存绝对有货
询价
IR
23+
TO-247
35890
询价
更多IRG4PC30供应商 更新时间2024-5-21 8:02:00