零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IRG4PC30 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) FastCoPackIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT VCES=600V VCE(on)typ.=1.59V @VGE=15V,IC=17A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhighereffi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgen | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOALR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packaged | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevio | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) StandardSpeedIGBT Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) UltraFastSpeedIGBT Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits • | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ult | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT UltraFastSpeedIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Benefits •Genera | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Fit Rate / Equivalent Device Hours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Fit Rate / Equivalent Device Hours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
详细参数
- 型号:
IRG4PC30
- 制造商:
IRF
- 制造商全称:
International Rectifier
- 功能描述:
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
22+ |
TO-247 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO-247 |
8000 |
只做原装现货 |
询价 | ||
IR |
23+ |
1018 |
TO-247 |
询价 | |||
IR |
07+/08+ |
TO-247-3 |
1199 |
询价 | |||
IR |
2017+ |
TO-247 |
21546 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
IR |
2016+ |
TO-247 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
询价 | ||
IR |
23+ |
TO-3P |
18000 |
询价 | |||
IR |
04+ |
原厂原装 |
800 |
自己公司全新库存绝对有货 |
询价 | ||
IR |
23+ |
TO-247 |
35890 |
询价 |
相关规格书
更多- IRG4PC30FDPBF
- IRG4PC30KDPBF
- IRG4PC30SPBF
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- IRG7PH42UD1-EP
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相关库存
更多- IRG4PC30FPBF
- IRG4PC30KPBF
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- IRG4PC40KPBF
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