IRFZ48Z中文资料PDF规格书
IRFZ48Z规格书详情
Description
Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated
产品属性
- 型号：
IRFZ48Z
- 功能描述：
MOSFET N-CH 55V 61A TO-220AB
- RoHS：
否
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
HEXFET®
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220AB |
6166 |
全新原装 |
询价 | ||
IR/VISHAY |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
23+ |
TO-220 |
35890 |
询价 | |||
IR/VISHAY |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
询价 | ||
IR/VISHAY |
TO-220 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
IR |
23+ |
TO-TO-220AB |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IR |
08+(pbfree) |
TO-220AB |
8866 |
询价 | |||
IR |
2020+ |
TO-220AB |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
1816+ |
TO-220 |
6523 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
Infineon Technologies |
23+ |
TO2203 |
9000 |
原装正品，支持实单 |
询价 |
