首页>IRFZ34NSPBF>规格书详情
IRFZ34NSPBF中文资料IRF数据手册PDF规格书
IRFZ34NSPBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Surface Mount (IRFZ34NS)
● Low-profile through-hole (IRFZ34NL)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号:
IRFZ34NSPBF
- 功能描述:
MOSFET 60V 1 N-CH HEXFET 40mOhms 22.7nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
21+ |
TO-263-2 |
10000 |
全新原装现货 |
询价 | ||
Infineon/英飞凌 |
21+ |
TO-263-2 |
6000 |
原装现货正品 |
询价 | ||
IR |
2020+ |
TO263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
VBSEMI/台湾微碧 |
24+23+ |
D2PAK |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
IR |
2023 |
TO-263-2 |
5200 |
公司原装现货/支持实单 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-263 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IR |
23+ |
NA/ |
3330 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
1822+ |
TO263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
IR |
21+ |
TO-263-2 |
10000 |
原装,品质保证,请来电咨询 |
询价 | ||
IR |
11+ |
TO-263 |
464 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |