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IRFS9N60A

SMPS MOSFET

Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •HighSpeedPowerSw

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS9N60A

Power MOSFET

FEATURES •LowGateChargeQgresultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib

VishayVishay Siliconix

威世科技

IRFS9N60A

iscN-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.75Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS9N60A

Power MOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技

IRFS9N60A_V01

Power MOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技

IRFS9N60APBF

Power MOSFET

FEATURES •LowGateChargeQgresultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib

VishayVishay Siliconix

威世科技

IRFS9N60APBF

SMPS MOSFET

Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •HighSpeedPowerSw

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS9N60ATRL

Power MOSFET

FEATURES •LowGateChargeQgresultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib

VishayVishay Siliconix

威世科技

IRFS9N60ATRLPBF

Power MOSFET

FEATURES •LowGateChargeQgresultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib

VishayVishay Siliconix

威世科技

IRFS9N60ATRR

Power MOSFET

FEATURES •LowGateChargeQgresultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib

VishayVishay Siliconix

威世科技

IRFS9N60ATRRPBF

Power MOSFET

FEATURES •LowGateChargeQgresultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninterruptib

VishayVishay Siliconix

威世科技

IRFS9N60APBF

Power MOSFET

VishayVishay Siliconix

威世科技

IRFS9N60ATRLPBFA

Power MOSFET

VishayVishay Siliconix

威世科技

IRFS9N60ATRRPBFA

Power MOSFET

VishayVishay Siliconix

威世科技

9N60

iscN-ChannelMosfetTransistor

DESCRITION ·Designedforhighefficiencyswitchmodepowersupply. FEATURES ·DrainCurrent–ID=8.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ·AvalancheEnergySpecified ·FastSwitching ·SimpleD

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BLV9N60

N-channelEnhancementModePowerMOSFET

ESTEKEstek Electronics Co. Ltd

Estek Electronics Co. Ltd

FB9N60A

PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

FCD9N60N

N-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCD9N60NTM

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCD9N60NTM

N-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    IRFS9N60

  • 功能描述:

    MOSFET N-Chan 600V 9.2 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2024+实力库存
D2-pak
20000
只做原厂渠道 可追溯货源
询价
INFINEON/英飞凌
21+23+
TO-263
31800
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
INTERNATIONA
05+
原厂原装
4221
只做全新原装真实现货供应
询价
IR
1436+
TO-263
30000
绝对原装进口现货可开增值税发票
询价
IR
2015+
D2-Pak
19889
一级代理原装现货,特价热卖!
询价
IR
23+
D2-Pak
19526
询价
IR
23+
1018
D2-Pak
询价
IR
08+(pbfree)
D2-Pak
8866
询价
IR
23+
TO-220
6000
全新原装现货
询价
ir
22+
N/A
6980
原装现货,可开13%税票
询价
更多IRFS9N60供应商 更新时间2024-5-31 16:36:00