首页 >IRFS3306PBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
3225PackageUltra-LowJitter1.8VOscillator | GOLLEDGEGolledge Electronics Ltd 高利电子高利电子有限公司 | GOLLEDGE | ||
3225PackageUltra-LowJitter2.5VOscillator | GOLLEDGEGolledge Electronics Ltd 高利电子高利电子有限公司 | GOLLEDGE | ||
3225PackageUltra-LowJitter3.3VOscillator | GOLLEDGEGolledge Electronics Ltd 高利电子高利电子有限公司 | GOLLEDGE | ||
6-Bit,15MSPS,FlashA/DConverter Description TheHI3306familyareCMOSparallel(FLASH)analog-to-digitalconvertersdesignedforapplicationsdemandingbothlowpowerconsumptionandhighspeeddigitization.Digitizingat15MHz,forexample,requiresonlyabout55mW. Features •CMOSLowPower(Typ)........... | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
N-ChannelEnhancementModeMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelEnhancementModeMOSFET | HUAYIHUAYI MICROELECTRONICS CO.,LTD. 华羿微华羿微电子股份有限公司 | HUAYI | ||
N-ChannelEnhancementModeMOSFET | HUAYIHUAYI MICROELECTRONICS CO.,LTD. 华羿微华羿微电子股份有限公司 | HUAYI | ||
QUICKSWITCHPRODUCTSHIGH-SPEEDCMOSDUALBUSSWITCHWITHINDIVIDUAL | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
QUICKSWITCH®PRODUCTSHIGH-SPEEDCMOSDUALBUSSWITCHWITHINDIVIDUALACTIVELOWENABLES FEATURES: •EnhancedNchannelFETwithnoinherentdiodetoVcc •VerylowONresistance(5Ωtypical) •Zeropropagationdelay,zeroaddedgroundbounce •Fastturn-on/turn-offtime •Undershootclampdiodesonallswitchandcontrolinputs •AvailableinSOICpackage APPLICATIONS: •Line | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFETPowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HighEfficiencySynchronousRectificationinSMPS Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability ●Lead-Free ●RoHSCompliant,Halogen-Free Applications ●HighEfficiencySynchronousRectificationinSMPS ●Uninterruptibl | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HighEfficiencySynchronousRectificationinSMPS Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability ●Lead-Free ●RoHSCompliant,Halogen-Free Applications ●HighEfficiencySynchronousRectificationinSMPS ●Uninterruptibl | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HighEfficiencySynchronousRectificationinSMPS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HighEfficiencySynchronousRectificationinSMPS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
详细参数
- 型号：
IRFS3306PBF
- 功能描述：
MOSFET 60V 1 N-CH HEXFET 4.2mOhms 85nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
D2PAK |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IR |
07+/08+ |
TO-263 |
500 |
询价 | |||
IR |
2015+ |
D2-Pak |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
IR |
2017+ |
D2PAK |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
IR |
23+ |
D2-Pak |
8600 |
全新原装现货 |
询价 | ||
Infineon |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
1844+ |
STO-263 |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
23+ |
N/A |
30350 |
正品授权货源可靠 |
询价 |
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