首页 >IRFR9024NTRPB>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Advanced Process Technology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P-Channel 60-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
INSULATEDPCSPACERS/SUPPORTS INSULATEDPCSPACERS/SUPPORTS •Boardwillbeelectricallyinsulated,eliminatesneedforinsulatingwashers •Easysnap-inassembly •Notoolrequiredforinstallation •Designedfor.062(1.57)thickboards •Onepiecedesigneliminatestheneedforadditionalscrewsandnuts •Slimdesig | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
MilitaryManaged24-Port1GEthernetRouter/Switch FEATURESDESCRIPTION EthernetisbecomingthestandardforIP-based componentsinmilitaryandcommercialapplications onland,seaandairplatforms. TheMILTECH9024isspecificallydesignedfor battlefieldC4ISR,voice,video,sensordataacquisition andcommunicationsinplatformsthatha | ENERCON Enercon Technologies Europe AG | ENERCON | ||
SnapRivets | Heyco Heyco | Heyco | ||
SnapRivets | Heyco Heyco | Heyco | ||
Cooper-WheelockAS/AHSerles | GAMEWELL-FCIGamewell-FCI by Honeywell Gamewell-FCI by Honeywell | GAMEWELL-FCI | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
SAWComponentsLow-LossFilterforMobileCommunication942,5MHz Features ■Low-lossRFfilterformobiletelephoneEGSMsystem,receivepath ■Usablepassband35MHz ■Unbalancedoperation ■Impedance50Ωinputandoutput ■CeramicPackageforSurfaceMountedTechnology(SMT) | EPCOSEPCOS - TDK Electronics 爱普科斯爱普科斯与TDK元件事业部 | EPCOS | ||
15C20AWG7/28TCPVC/PVC | GENERALGeneral Electric 通用电气公司美国通用电气公司 | GENERAL | ||
DA9024Quad1.2ABuckPMICwithAudioDrivers | Dialog Dialog | Dialog | ||
GENLINX-TMIIEB9024EvaluationBoard | GennumGennum Corporation 根努姆公司 | Gennum | ||
SAWBandpassFilter | ITFIntegrated Technology Future Integrated Technology Future | ITF |
详细参数
- 型号：
IRFR9024NTRPB
- 功能描述：
MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
TO-252 |
10000 |
全新、原装 |
询价 | ||
IR |
23+ |
D-PAK |
20540 |
保证进口原装现货假一赔十 |
询价 | ||
IR |
2020+ |
D-PAK |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
INFINEON |
21+ |
TO-252 |
30000 |
只做原装 只有原装 |
询价 | ||
INFINEON/IR |
1907+ |
NA |
10000 |
20年老字号,原装优势长期供货 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-252 |
42000 |
郑重承诺只做原装进口现货 |
询价 | ||
INFINEON |
22+ |
TO-220 |
6000 |
原装正品可支持验货,欢迎咨询 |
询价 | ||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
询价 | ||
IR |
16+ |
TO-252 |
36000 |
原装正品,优势库存81 |
询价 | ||
IR |
15+ |
DIPSOP |
12300 |
原装进口现货,假一罚十 |
询价 |
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