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IRFR9024NPBF中文资料PDF规格书
IRFR9024NPBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Ultra Low On-Resistance
● P-Channel
● Surface Mount (IRFR9024N)
● Straight Lead (IRFU9024N)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号：
IRFR9024NPBF
- 功能描述：
MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO-252 |
885 |
原装现货假一赔十 |
询价 | ||
IR/infineon |
22+ |
TO-252 |
500000 |
P沟道场效应管-55V,0.175mO,-8.8A,38W |
询价 | ||
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
IR(VISHAY) |
23+ |
TO-252 |
20000 |
全新原装假一赔十 |
询价 | ||
IR |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR/VISHAY |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
1948+ |
TO-252 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-252 |
89630 |
当天发货全新原装现货 |
询价 |
