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IRFR310TRPBFA

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR310TRPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFR310TRRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半导体

IRFR310TRRPBFA

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU310

PowerMOSFET(Vdss=400V,Rds(on)=3.6ohm,Id=1.7A)

IRF

International Rectifier

IRFU310

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半导体

IRFU310

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU310

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFU310

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU310

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR310,SiHFR310) •Straightlead(IRFU310,SiHFU310) •Availableintapeandreel •Fastswitching •Fullyavalancherated •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc

VishayVishay Siliconix

威世科技威世科技半导体

IRFU310A

AdvancedPowerMOSFET

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowRDS(ON):2.815Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFU310A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFU310B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFU310B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU310B

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFU310PBF

HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=3.6廓,ID=1.7A)

IRF

International Rectifier

IRFU310PBF

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半导体

IRFU310PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU310PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFY310

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

详细参数

  • 型号:

    IRFR310TRPBFA

  • 制造商:

    KERSEMI

  • 制造商全称:

    Kersemi Electronic Co., Ltd.

  • 功能描述:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
Vishay Siliconix
23+
SMD
71823
原装正品实单可谈 库存现货
询价
VISHAY/威世
24+
NA
860000
明嘉莱只做原装正品现货
询价
IR/INFINEON
24+23+
SOT252
12580
16年现货库存供应商终端BOM表可配单提供样品
询价
IR
23+
SOT252
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
23+
TO252
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
2022+
D-PAK(TO-252)
8000
只做原装支持实单,有单必成。
询价
VISHAY/威世
2022
TO252
80000
原装现货,OEM渠道,欢迎咨询
询价
IR
21+
TO252
9850
只做原装正品假一赔十!正规渠道订货!
询价
VISHAY/威世
TO-252
货真价实,假一罚十
25000
询价
VISHAY/威世
22+
TO252
128038
郑重承诺只做原装进口现货
询价
更多IRFR310TRPBFA供应商 更新时间2024-9-21 11:00:00