首页 >IRFR014TRPBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SchottkyBarrierDiode | ZOWIEZOWIE 智威智威科技股份有限公司 | ZOWIE | ||
InductiveSensors | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫自动化（上海）有限公司 | Balluff | ||
InductiveSensors | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫自动化（上海）有限公司 | Balluff | ||
InductiveSensors | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫自动化（上海）有限公司 | Balluff | ||
InductiveSensors | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫自动化（上海）有限公司 | Balluff | ||
InductiveSensors | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫自动化（上海）有限公司 | Balluff | ||
BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 | ADAM-TECH | ||
Multi-FrequencyProcessor | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫自动化（上海）有限公司 | Balluff | ||
DATUM/DUALDATUMFREQUENCY | CMLMICROCML Microcircuits CML公司 | CMLMICRO | ||
ZeroLossAutomaticXCapacitorDischargeIC | POWERINTPower Integrations, Inc. 荷兰帕沃英蒂格盛有限公司 | POWERINT | ||
Zero1LossAutomaticXCapacitorDischargeIC | POWERINTPower Integrations, Inc. 荷兰帕沃英蒂格盛有限公司 | POWERINT | ||
ZeroLossAutomaticXCapacitorDischargeIC | POWERINTPower Integrations, Inc. 荷兰帕沃英蒂格盛有限公司 | POWERINT | ||
HCMOS/TTL | CRYSTEKCRYSTAL Crystek Corporation | CRYSTEKCRYSTAL | ||
ClockOscillator | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
ClockOscillator | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 |
详细参数
- 型号：
IRFR014TRPBF
- 功能描述：
MOSFET N-Chan 60V 7.7 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
D-Pak |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IR |
20+ |
SOT-252 |
3000 |
支持实单/原盒/原包/原标/进口原装 |
询价 | ||
IR |
23+ |
TO252 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
VISHAY |
21+ |
TO-252-3 (DPAK) |
4000 |
原装正品 有挂有货 |
询价 | ||
IR |
2024+实力库存 |
TO-252 |
17 |
只做原厂渠道 可追溯货源 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-252 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
VISHAY/IR |
22+ |
原厂封装 |
9025 |
原装正品，实单请联系 |
询价 | ||
IR |
TO252 |
7906200 |
询价 | ||||
VISHAY(威世) |
23+ |
TO-252 |
9203 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IR |
23+ |
SOT252 |
9526 |
询价 |
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