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IRFP90N20D

Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=94A??

Applications •HighfrequencyDC-DCconverters Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP90N20DPBF

SMPS MOSFET

Applications •HighfrequencyDC-DCconverters •Lead-Free Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP90N20D

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP90N20DPBF

High frequency DC-DC converters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP90N20DPBF_15

High frequency DC-DC converters

IRFInternational Rectifier

英飞凌英飞凌科技公司

90N20

HiPerFETPowerMOSFETs

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●U

IXYS

IXYS Integrated Circuits Division

IIRFP90N20D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFBA90N20

PowerMOSFET(Vdss=200V,Rds(on)max=0.023ohm,Id=98A??

Applications •HighfrequencyDC-DCconverters Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA90N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.023ohm,Id=98A??

Applications •HighfrequencyDC-DCconverters Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA90N20DPBF

HEXFET짰PowerMOSFET

Applications •HighfrequencyDC-DCconverters •Lead-Free Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA90N20DPBF

HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IXFH90N20Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH90N20Q

HiPerFETTMPowerMOSFETsQ-CLASS

IXYS

IXYS Integrated Circuits Division

IXFK90N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=90A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK90N20

HiPerFETPowerMOSFETs

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●U

IXYS

IXYS Integrated Circuits Division

IXFK90N20Q

HiPerFETPowerMOSFETs

HiPerFET™PowerMOSFETsQClass N-ChannelEnhancementMode AvalancheRated LowQg, Highdv/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Fastintrinsicrectifier •Fastswitching •Moldi

IXYS

IXYS Integrated Circuits Division

IXFK90N20Q

HiPerFETTMPowerMOSFETsQ-CLASS

IXYS

IXYS Integrated Circuits Division

IXFK90N20QS

HiPerFETPowerMOSFETs

HiPerFET™PowerMOSFETsQClass N-ChannelEnhancementMode AvalancheRated LowQg, Highdv/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Fastintrinsicrectifier •Fastswitching •Moldi

IXYS

IXYS Integrated Circuits Division

IXFQ90N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX90N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IRFP90N20

  • 制造商:

    IRF

  • 制造商全称:

    International Rectifier

  • 功能描述:

    Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=94A)

供应商型号品牌批号封装库存备注价格
IR
2020+
TO-3P
79000
询价
2015+
600
公司现货库存
询价
IR
08+(pbfree)
TO-247AC
8866
询价
IR
23+
管3P
18000
询价
IR
1305+
TO-247
12000
公司特价原装现货
询价
IR
23+
TO-247
35890
询价
IR
23+
TO-247
7750
全新原装优势
询价
IR
16+
原厂封装
1928
原装现货假一罚十
询价
IR
16+
TO-3P
10000
全新原装现货
询价
IR
23+
TO-3P
5000
原装正品,假一罚十
询价
更多IRFP90N20供应商 更新时间2024-5-22 15:32:00