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IRFP260NPBF中文资料PDF规格书
IRFP260NPBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free
产品属性
- 型号:
IRFP260NPBF
- 功能描述:
MOSFET MOSFT 200V 49A 40mOhm 156nCAC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
TO-247 |
918000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
1912+ |
TO247 |
16850 |
绝对原装现货 |
询价 | ||
INFINEON |
21+/22+ |
200000 |
原装正品 |
询价 | |||
INFINEON |
20+ |
TO-220 |
50000 |
询价 | |||
INFINEON/英飞凌 |
20+ |
TO-247 |
4000 |
进口原装假一赔十支持含税 |
询价 | ||
IR |
TO-247 |
5600 |
询价 | ||||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
19+ |
247 |
100000 |
原装正品 |
询价 | ||
Infineon/英飞凌 |
21+ |
TO-247(AC) |
8800 |
公司只作原装正品 |
询价 | ||
Infineon/英飞凌 |
22+ |
SMD |
80000 |
原厂渠道/可含税特价出/诚信经营 |
询价 |