IRFIBF30G中文资料PDF规格书
IRFIBF30G规格书详情
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
• Isolated Package
• High Voltage Isolation = 2.5 KVRMS
• Sink to Lead Creepage Dis. = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead-Free
产品属性
- 型号:
IRFIBF30G
- 功能描述:
MOSFET N-Chan 900V 1.9 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY进 |
2020+ |
TO-220F |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
INTERSIL |
23+ |
65480 |
询价 | ||||
IR |
23+ |
PLCC44 |
18000 |
询价 | |||
Vishay Siliconix |
21+ |
TO2203 Isolated Tab |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR |
23+ |
TO-220F |
11206 |
全新原装 |
询价 | ||
VISHAY/威世 |
11+ |
TO-220F |
177 |
询价 | |||
IR |
2020+ |
TO220 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
VISHAY/威世 |
22+/23+ |
TO-220F |
9800 |
原装进口公司现货假一赔百 |
询价 | ||
IR |
23+ |
TO-220F |
9896 |
询价 | |||
TH/韩国太虹 |
2048+ |
TO-220 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 |