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IRFDC20PBF中文资料PDF规格书
IRFDC20PBF规格书详情
VDS (V) 600
RDS(on) (Ω) VGS = 10 V 4.4
Qg (Max.) (nC) 18
Qgs (nC) 3.0
Qgd (nC) 8.9
Configuration Single
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
产品属性
- 型号:
IRFDC20PBF
- 功能描述:
MOSFET N-Chan 600V 0.32 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
4-HVMDIP |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IR |
18 |
LCC |
200 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
IRC |
1535+ |
261 |
询价 | ||||
INFINEON |
23+ |
C-LCC-18 |
14253 |
原包装原标现货,假一罚十, |
询价 | ||
IR |
专业军工 |
NA |
1000 |
只做原装正品军工级部分订货 |
询价 | ||
Vishay Siliconix |
21+ |
6-TSSOP,SC-88,SOT-363 |
21000 |
专业分立半导体,原装渠道正品现货 |
询价 | ||
Vishay PCS |
2022+ |
874 |
全新原装 货期两周 |
询价 | |||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原厂渠道,现货配单 |
询价 | ||
VISHAY/威世 |
21+ROHS |
4-PinHVMDIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
VISHAY |
23+ |
DIP2 |
7750 |
全新原装优势 |
询价 |