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IRF9Z24SPBF中文资料PDF规格书
IRF9Z24SPBF规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• Advanced Process Technology
• Surface Mount (IRF9Z24S, SiHF9Z24S)
• Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
产品属性
- 型号:
IRF9Z24SPBF
- 功能描述:
MOSFET P-Chan 60V 11 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
D2PAK(TO-263) |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
VISHAY(威世) |
23+ |
TO2633 |
6000 |
询价 | |||
IR |
24+ |
TO263 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
Vishay(威世) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
VISHAY(威世) |
23+ |
TO-263-3 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IR |
1816+ |
TO-263 |
6523 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
SILICONIXVISHAY |
21+ |
NA |
1820 |
只做原装,一定有货,不止网上数量,量多可订货! |
询价 | ||
IR |
2023+ |
TO263 |
6893 |
十五年行业诚信经营,专注全新正品 |
询价 | ||
SILICONIX (VISHAY) |
23+ |
原厂原封 |
800 |
订货1周 原装正品 |
询价 | ||
Vishay Siliconix |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
询价 |