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IRF8707PBF中文资料PDF规格书
IRF8707PBF规格书详情
Description
The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are critical in synchronous buck operationincluding Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
Benefits
Very Low Gate Charge
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
20V VGS Max. Gate Rating
100 tested for Rg
Lead-Free
产品属性
- 型号：
IRF8707PBF
- 功能描述：
MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
SOP-8 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
23+ |
NA/ |
15435 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
1948+ |
SOP-8 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
11+ |
SO-8 |
285 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
2021+ |
SOIC8 |
3500 |
十年专营原装现货,假一赔十 |
询价 | ||
IR |
23+ |
NA |
3474 |
专做原装正品,假一罚百! |
询价 | ||
询价请加QQ2850920316 |
SOP-8 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
IR |
22+ |
SOP-8 |
8000 |
原装正品支持实单 |
询价 | ||
IR |
2024+实力库存 |
SOP8 |
27930 |
只做原厂渠道 可追溯货源 |
询价 | ||
INTERNATIONALRECTIFIER |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 |
