首页 >IRF830ALPBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
5A500VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
5A500VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
LEDelectronicdriver | LUMINIS Lumins Inc. | LUMINIS | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
LowGateChargeQgResultsinSimpleDriveRequirement FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSu | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSu | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET(Vdss=500V,Rds(on)max=1.40ohm,Id=5.0A) SMPSMOSFET Benefits ●LowGateChargeQgResultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSup | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww. | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
DSeriesPowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
详细参数
- 型号：
IRF830ALPBF
- 功能描述：
MOSFET N-Chan 500V 5.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
I2PAK |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
VISHAY/威世 |
2024+实力库存 |
TO-262 |
45 |
只做原厂渠道 可追溯货源 |
询价 | ||
VISHAY |
2016+ |
TO-262 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
VISHAY |
22+23+ |
TO-262 |
28215 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VISHAY |
23+ |
NA |
27000 |
原装现货 库存特价/长期供应元器件代理经销 |
询价 | ||
VISHAY/威世 |
23+ |
TO-262 |
30000 |
全新原装现货,价格优势 |
询价 | ||
VISHAY/威世 |
21+ |
TO-262 |
50000 |
终端可免费提供样品,欢迎咨询 |
询价 | ||
VISHAY |
1809+ |
TO-262 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Vishay Siliconix |
21+ |
TO-253-4,TO-253AA |
21000 |
专业分立半导体,原装渠道正品现货 |
询价 |
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