IRF7702TR中文资料PDF规格书
IRF7702TR规格书详情
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45 less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (
● Ultra Low On-Resistance
● -1.8V Rated
● P-Channel MOSFET
● Very Small SOIC Package
● Low Profile ( < 1.1mm)
● Available in Tape & Reel
产品属性
- 型号:
IRF7702TR
- 功能描述:
MOSFET P-CH 12V 8A 8-TSSOP
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
21+ |
8TSSOP |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR |
01+;0110+ |
TSSOP8 |
10000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
21+ |
SOP-8 |
5000 |
原装现货/假一赔十/支持第三方检验 |
询价 | ||
IR |
2020+ |
TSOP |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
Infineon Technologies |
23+ |
8TSSOP |
9000 |
原装正品,支持实单 |
询价 | ||
IR |
SSOP8 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
IR |
07+/08+ |
8-TSSOP |
7500 |
询价 | |||
VISHAY-威世 |
24+25+/26+27+ |
MSOP-8 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IRF |
19+ |
TSSOP-14PI |
74706 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | ||
IR |
05+ |
原厂原装 |
50051 |
只做全新原装真实现货供应 |
询价 |