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IRF710	文件：56.15 Kbytes Page：7 Pages	2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
IRF710	文件：1.01954 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa	VishayVishay Siliconix 威世科技	Vishay
IRF710	文件：147.35 Kbytes Page：5 Pages	N-Channel Power MOSFETs, 2.25A, 350-400V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IRF710	文件：791.66 Kbytes Page：3 Pages	N-Channel Power MOSFETs, 2.25 A, 350-400 V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
IRF710	文件：791.66 Kbytes Page：3 Pages	IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
IRF710	文件：203.87 Kbytes Page：2 Pages	N-Channel Mosfet Transistor ·DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ·FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDrive	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRF710	文件：360.17 Kbytes Page：5 Pages	N-Channel Power MOSFETs	ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED.	ARTSCHIP
IRF710	文件：159.88 Kbytes Page：8 Pages	Power MOSFET FEATURES	VishayVishay Siliconix 威世科技	Vishay
IRF710	文件：284.58 Kbytes Page：9 Pages	Power MOSFET	VishayVishay Siliconix 威世科技	Vishay
IRF7101	文件：211.13 Kbytes Page：10 Pages	HEXFET Power MOSFET Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent ●20VVGSMax.GateRating ●100testedforRg Applications ●SynchronousMOSFETforNotebookProcessorPower ●SynchronousRectifierMOSFETforIsolatedDC-DCConverters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF7101	文件：265.04 Kbytes Page：9 Pages	HEXFET Power MOSFET Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF7101PBF	文件：275.91 Kbytes Page：9 Pages	HEXFET짰 Power MOSFET Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF7101TRPBF	文件：281.46 Kbytes Page：9 Pages	Adavanced Process Technology Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF7103	文件：169.18 Kbytes Page：9 Pages	Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A) Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF7103PBF	文件：273.24 Kbytes Page：9 Pages	HEXFET Power MOSFET Description TheSO-8hasbeenmodifiedthroughacustomizedleadframeforenhancedthermalcharacteristicsanddual-diecapabilitymakingitidealinavarietyofpowerapplications.Withtheseimprovements,multipledevicescanbeusedinanapplicationwithdramaticallyreducedboardspace.The	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF7103Q	文件：169.02 Kbytes Page：10 Pages	Power MOSFET(Vdss=50V) AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,theseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMO	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF7103TR	文件：420.2 Kbytes Page：9 Pages	Dual N-Channel MOSFET Features VDs(v=50V RDpsON)	UMWUMW 友台友台半导体	UMW
IRF7103TRPBF	文件：309.95 Kbytes Page：10 Pages	adavanced process technology Description TheSO-8hasbeenmodifiedthroughacustomizedleadframeforenhancedthermalcharacteristicsanddual-diecapabilitymakingitidealinavarietyofpowerapplications.Withtheseimprovements,multipledevicescanbeusedinanapplicationwithdramaticallyreducedboardspace.The	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF7104	文件：158.94 Kbytes Page：9 Pages	HEXFET Power MOSFET Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF7104PBF	文件：215.54 Kbytes Page：9 Pages	HEXFET Power MOSFET Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

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详细参数

型号：
IRF710
功能描述：
MOSFET N-Chan 400V 2.0 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	IRF710	IR	23+		1018	TO-220	询价
绿盛电子(香港)有限公司	IRF710	IR	2015+	TO-220	19889	一级代理原装现货,特价热卖!	询价
鑫勃源（上海北京青岛）有限公司	IRF710	IR	23+	PLCC	18000		询价
深圳好佳好科技有限公司	IRF710	SEC	1305+	TO-220	12000		询价
深圳市深创辉科技有限公司	IRF710	IR	1995		26	原装正品现货供应	询价
深圳市昌和盛利电子有限公司	IRF710	IR	23+	TO-220	19526		询价
深圳市卓越微芯电子有限公司	IRF710	IR	2020+	TO-220	22	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市星佑电子有限公司	IRF710	IR	06+	TO-220	8000	原装库存	询价
齐创科技(上海,北京,青岛)有限公司	IRF710	SEC	23+	34-PCM	5000	原装正品,假一罚十	询价
深圳市弘为电子有限公司	IRF710	VISHAY/IR	16+	原厂封装	550	原装现货假一罚十	询价

更多IRF710供应商更新时间2024-5-9 16:00:00

详细参数

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