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IRF6665TRPBF中文资料PDF规格书
IRF6665TRPBF规格书详情
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower EMI
• Can deliver up to 100W per channel into 8Ω with no heatsink
• Dual sided cooling compatible
• Compatible with existing surface mount technologies
• RoHS compliant containing no lead or bromide
• ead-Free (Qualified up to 260°C Reflow)
产品属性
- 型号:
IRF6665TRPBF
- 功能描述:
MOSFET DIGITAL AUDIO 100V 1 N-CH HEXFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
2339+ |
SMD |
32280 |
原装现货 假一罚十!十年信誉只做原装! |
询价 | ||
INFINEON/英飞凌 |
23+ |
SMD |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
询价 | ||
Infineon |
2023 |
6500 |
公司原装现货/支持实单 |
询价 | |||
原厂原包 |
2022+ |
原装 |
38560 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
询价 | ||
IR |
23+ |
SMD |
4500 |
原装正品假一罚百!可开增票! |
询价 | ||
IR |
23+ |
SMD |
62912 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IR |
22+ |
SMD |
9000 |
原装正品 |
询价 | ||
Infineon Technologies |
24+ |
DIRECTFET? SH |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IR |
21+ |
SMD |
20000 |
全新原装 公司现货 价优 |
询价 | ||
IR/INF |
2018+ |
SMD |
5000 |
原装正品现货,可开13点税 |
询价 |