IRF6215S中文资料PDF规格书
IRF6215S规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of
applications.
Advanced Process Technology
Surface Mount (IRF6215S)
Low-profile through-hole (IRF6215L)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
产品属性
- 型号:
IRF6215S
- 功能描述:
MOSFET P-CH 150V 13A D2PAK
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
2310+ |
TO263 |
3668 |
优势代理渠道,原装现货,可全系列订货 |
询价 | ||
IR/INFINEON |
24+23+ |
D2-Pak |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
23+ |
N/A |
45990 |
正品授权货源可靠 |
询价 | |||
IR |
23+ |
NA/ |
3317 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
2022+ |
TO-263 |
48000 |
只做原装,原装,假一罚十 |
询价 | ||
IR |
2020+ |
TO-263 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
2023+ |
TO-263 |
16800 |
芯为只有原装,公司现货 |
询价 | ||
IR |
TO |
5350 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
IR |
12+ |
TO-263 |
1335 |
询价 |