IRF5803D2中文资料PDF规格书
IRF5803D2规格书详情
VDSS = -40V
RDS(on) = 112mΩ
Schottky Vf = 0.51V
Description
The FETKY™ family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifiers low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
● Co-packaged HEXFET® Power MOSFET and Schottky Diode
● Ideal For Buck Regulator Applications
● P-Channel HEXFET®
● Low VF Schottky Rectifier
● SO-8 Footprint
产品属性
- 型号:
IRF5803D2
- 功能描述:
MOSFET P-CH 40V 3.4A 8-SOIC
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
FETKY™
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
3954 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
2020+ |
SOP8 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
2020+ |
SOP-8 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | |||
IR |
04+ |
SOP8 |
1449 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Infineon Technologies |
21+ |
8SOIC |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR |
2022 |
SOP8 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
IR |
22+ |
8-SO |
25000 |
只有原装绝对原装,支持BOM配单! |
询价 | ||
IR |
1822+ |
SOP8 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
IOR |
01+ |
SOP-8P |
160 |
询价 | |||
IOR |
23+ |
PLCC |
18000 |
询价 |