IRF5305L中文资料PDF规格书
IRF5305L规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
l Advanced Process Technology
l Surface Mount (IRF5305S)
l Low-profile through-hole (IRF5305L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
产品属性
- 型号:
IRF5305L
- 功能描述:
MOSFET P-CH 55V 31A TO-262
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-262 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
2023+ |
TO-262 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
IR |
2020+ |
TO-262 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
21+ROHS |
TO-262 |
122322 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IR |
15+ |
TO-220 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
IR |
TO-262 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
IR |
1923+ |
TO-220 |
5000 |
正品原装品质假一赔十 |
询价 | ||
IR |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IR |
23+ |
TO-262 |
4500 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
IR |
08+(pbfree) |
TO-262 |
8866 |
询价 |