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IRF3415SPBF中文资料PDF规格书
IRF3415SPBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3415L) is available for low profile applications
● Advanced Process Technology
● Surface Mount (IRF3415S)
● Low-profile through-hole (IRF3415L)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号:
IRF3415SPBF
- 功能描述:
MOSFET 150V 1 N-CH HEXFET 42mOhms 133.3nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
23+ |
TO-263-2 |
25000 |
原装正品,假一赔十! |
询价 | ||
Infineon/英飞凌 |
21+ |
TO-263-2 |
6000 |
原装现货正品 |
询价 | ||
IR |
23+ |
NA/ |
10065 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
20+ |
TO-263 |
65300 |
一级代理/放心购买! |
询价 | ||
IR |
2020+ |
TO-263 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
24+ |
TO263 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
Infineon/英飞凌 |
21+ |
TO-263-2 |
6820 |
只做原装,质量保证 |
询价 | ||
IR |
23+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IR |
TO263 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
IR |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
询价 |