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IRF223中文资料PDF规格书

IRF223
厂商型号

IRF223

功能描述

Nanosecond Switching Speeds

文件大小

135.19 Kbytes

页面数量

3

生产厂商 New Jersey Semi-Conductor Products, Inc.
企业简称

NJSEMI新泽西半导体

中文名称

新泽西半导体产品股份有限公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2024-6-2 13:02:00

IRF223规格书详情

Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

• 4.0A and 5.0A, 150V and 200V

• rDS(ON) = 0.8Ω and 1.2£i

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

产品属性

  • 型号:

    IRF223

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

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