零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
CMOSLOWDROPOUTREGULATOR(LDO)600mAADJUSTABLE,ULTRA-LOWNOISE,ULTRA-FAST DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
LowOn-resistance,FastSwitchingCharacteristic | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
HELP3EDual-bandIMT&EGSMWCDMA3.4VLinearPowerAmplifierModule | ANADIGICS ANADIGICS | ANADIGICS | ||
DUALCATVBROADBANDHIGHLINEARITYGAASHBTAMPLIFIER ProductDescription StanfordMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesl | STANFORDStanford Microdevices Stanford Microdevices | STANFORD | ||
DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle | SIRENZASIRENZA 圆通微波上海圆通微波电子有限公司 | SIRENZA | ||
DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren | RFMD RF Micro Devices | RFMD | ||
DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren | RFMD RF Micro Devices | RFMD | ||
DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle | SIRENZASIRENZA 圆通微波上海圆通微波电子有限公司 | SIRENZA | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
integratedUSBType-C | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
integratedUSBType-C | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
HEXFETPowerMOSFET Description TheIRF6618combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET Description TheIRF6609combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
DirectFET짰PowerMOSFET짰 Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
IdealforCPUCoreDC-DCConverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
IdealforCPUCoreDC-DCConverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
DirectFET짰PowerMOSFET짰 Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerWise짰130MHz,1.25mARRIOOperationalAmplifiers | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
130MHz,1.25mARail-to-RailInputandOutputOperationalAmplifierwithShutdown | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
130MHz,1.25mARRIOOperationalAmplifiers | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IPT |
23+ |
SOP-8 |
50000 |
现货特价出售 |
询价 | ||
IPT |
23+ |
SOP8 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
IPOWER |
21+ROHS |
SOP8 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IPT英特源 |
SOP8 |
999999 |
全新原装正品 一级代理假一罚十 长期有货 |
询价 | |||
IPT |
2022+ |
SOP-8 |
14800 |
询价 | |||
IPT |
23+ |
SOP-8 |
89630 |
当天发货全新原装现货 |
询价 | ||
IPT |
24+ |
SOP-8 |
39500 |
进口原装现货 支持实单价优 |
询价 | ||
LATTICE |
06/07+ |
QFP |
303 |
询价 | |||
IDT |
22+ |
TQFP |
2000 |
原装正品现货 |
询价 | ||
IDT |
23+ |
TQFP |
25015 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 |
相关规格书
更多- IR1010
- IR1176S
- IR1282
- IR2010S
- IR20153S
- IR2085S
- IR2101S
- IR2102
- IR2103
- IR2104
- IR2104STR
- IR2105S
- IR21064
- IR2106S
- IR21074S
- IR21084
- IR2108S
- IR21091S
- IR21094S
- IR2110
- IR2110S
- IR2111
- IR2112
- IR2113
- IR2113-2
- IR2117
- IR2118
- IR2121
- IR2125S
- IR21271S
- IR2128
- IR2130
- IR2130S
- IR2131J
- IR2132
- IR2132S
- IR2133J
- IR2135
- IR2135S
- IR21362
- IR21362S
- IR2136S
- IR2151S
- IR2152S
- IR21531
相关库存
更多- IR1110
- IR120725
- IR2010
- IR2011S
- IR2015S
- IR2101
- IR2101STR
- IR2102S
- IR2103S
- IR2104S
- IR2105
- IR2106
- IR21064S
- IR2106STR
- IR2108
- IR21084S
- IR2109
- IR21094
- IR2109S
- IR2110-1
- IR2110STR
- IR2111S
- IR2112S
- IR2113-1
- IR2113S
- IR2117S
- IR2118S
- IR2125
- IR2127
- IR2127S
- IR2128S
- IR2130J
- IR2131
- IR2131S
- IR2132J
- IR2133
- IR2133S
- IR2135J
- IR2136
- IR21362J
- IR2136J
- IR2151
- IR2152
- IR2153
- IR21531S