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IIPD60R385CP

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.385Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPP60R385CP

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.385Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R385CP

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R385CP

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound CoolMOSCPisdesignedfor: •Hards

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA60R385CP

CoolMosPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB60R385CP

CoolMOSTMPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •HardswitchingSMPStopologies

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB60R385CP

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPD60R385CP

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.385Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPD60R385CP

600VCoolMOS??CPPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD60R385CP

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD60R385CP

CoolMOSPowerTransistor

CoolMOS®PowerTransistor Features •WorldwidebestRds,oninTO252 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) •Pb-freeleadplating;RoHScompliant; availableinHalogenfreemoldco

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD60R385CP

600VCoolMOS™CPPowerTransistor

Ultralowgatecharge Extremedv/dtrated Highpeakcurrentcapability FullyqualifiedaccordingJEDECforindustrialapplications Pb-freeleadplating;RoHScompliant,availableinHalogenfreemoldcompound

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R385CP

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •HardswitchingSMPStopologies

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R385CP

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R385CP

iscN-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.385Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPL60R385CP

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPL60R385CP

600VCoolMOSCPPowerTransistor

Description TheCoolMOS™CPseriesoffersdeviceswhichprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompact,lighter,andcooler. Features •Reducedboar

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP60R385CP

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP60R385CP

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •HardswitchingSMPStopologies

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP60R385CP

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.385Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
INFINEON
23+
TO-220
8000
只做原装现货
询价
INFINE0N
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
InfineonTechnologies
2019+
TO-220-3
65500
原装正品货到付款,价格优势!
询价
23+
N/A
46280
正品授权货源可靠
询价
VB
2019
TO-220C
55000
绝对原装正品假一罚十!
询价
INFINEON
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
Infineon
1931+
N/A
493
加我qq或微信,了解更多详细信息,体验一站式购物
询价
INFINEON
22+
TO-220
32350
原装正品 假一罚十 公司现货
询价
Infineon
22+
NA
148
加我QQ或微信咨询更多详细信息,
询价
INFINEON/英飞凌
23+
TO-220
50000
全新原装正品现货,支持订货
询价
更多IPP60R385P供应商 更新时间2024-5-14 15:00:00