IPP60R280C6其他被动元件规格书行情报价-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IIPP60R280C6	文件：338.57 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.28Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIPW60R280C6	文件：335.38 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPA60R280C6	文件：1.59291 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA60R280C6	文件：2.38545 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA60R280C6	文件：1.43803 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA60R280C6	文件：314.43 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB60R280C6	文件：189.55 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB60R280C6	文件：1.59291 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB60R280C6	文件：1.43803 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB60R280C6	文件：2.38545 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI60R280C6	文件：1.59291 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI60R280C6	文件：1.43803 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI60R280C6	文件：2.38545 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI60R280C6	文件：331.03 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.28Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPP60R280C6	文件：1.59291 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPP60R280C6	文件：338.57 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.28Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPP60R280C6	文件：1.43803 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPP60R280C6	文件：2.38545 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPW60R280C6	文件：2.38545 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPW60R280C6	文件：335.38 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宝隆宏业科技有限公司	IPP60R280C6其他被动元件	INFINEON/英飞凌	2122+	TO220	20003	原装现货支持实单价格优势出货	询价
深圳市云美电子科技有限公司	IPP60R280C6其他被动元件	INFINEON/英飞凌	22+	TO-220	34137	只做原装进口现货	询价
深圳庞田科技有限公司	IPP60R280C6其他被动元件	INFINEON/英飞凌	2023+	TO-220	11000	AI智能識别、工業、汽車、醫療方案LPC批量及配套一站	询价
深圳市诺美思科技有限公司	IPP60R280C6其他被动元件	INFINEON/英飞凌	22+/23+	TO-220	9800	原装进口公司现货假一赔百	询价
深圳市星宇佳科技有限公司	IPP60R280C6其他被动元件	INFINEON/英飞凌	220	14	62		询价
深圳市富安睿科技有限公司	IPP60R280CFD7	英飞凌	21+	PG-TO220-3	6000	绝对原裝现货	询价
艾睿国际（香港）有限公司	IPP60R280CFD7	Infineon(英飞凌)	2112+	PG-TO220-3	115000	500个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市晴轩时代电子有限公司	IPP60R280CFD7	Infineon/英飞凌	21+	PG-TO220-3	8800	公司只作原装正品	询价
深圳市杰顺创科技有限公司	IPP60R280CFD7	Infineon/英飞凌	21+	PG-TO220-3	6000	原装现货正品	询价
深圳市正纳电子有限公司	IPP60R280CFD7	Infineon(英飞凌)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价

更多IPP60R280C6其他被动元件供应商更新时间2024-5-2 16:08:00

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