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IIPA60R199CP

iscN-ChannelMOSFETTransistor

•FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.199Ω •Highpeakcurrentcapability •Enhancementmode •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •HardswitchingSMPStopologies

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPP60R199CP

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.199Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPW60R199CP

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤199mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R199CP

iscN-ChannelMOSFETTransistor

•FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.199Ω •Highpeakcurrentcapability •Enhancementmode •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •HardswitchingSMPStopologies

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R199CP

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisdesignedfor: •HardswitchingSMPStopologies

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA60R199CP

CoolMosPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA60R199CP

CoolMOS짰PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB60R199CP

CoolMOS짰PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB60R199CP

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •Hardswitchingtopologies,forServe

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB60R199CP

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •Hardswitchingtopologies,forServe

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB60R199CP

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB60R199CPA

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R199CP

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R199CP

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •Hardswitchingtopologies,forServe

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R199CP

iscN-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.199Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPI60R199CP

CoolMOS짰PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPL60R199CP

600VCoolMOSCPPowerTransistor

Description TheCoolMOS™CPseriesoffersdeviceswhichprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompact,lighter,andcooler. Features •Reducedboar

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPL60R199CP

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP60R199CP

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.199Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPP60R199CP

CoolMOS짰PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

详细参数

  • 型号:

    IPP60R199CPXK

  • 制造商:

    Infineon Technologies AG

  • 功能描述:

    TRANS MOSFET N-CH 650V 16A 3PIN TO-220AB - Rail/Tube

供应商型号品牌批号封装库存备注价格
Infineon
17+
TO220-3
17900
MOSFET管
询价
Infineon
1931+
N/A
493
加我qq或微信,了解更多详细信息,体验一站式购物
询价
Infineon Technologies
21+
PG-TO220-3
5000
INFINEON专卖,进口原装深圳现货
询价
INFINEON
*
*
10
原装进口,要货Q谈,只做原装,只做原装
询价
INFINEON
1809+
TO220-3
1675
就找我吧!--邀您体验愉快问购元件!
询价
INFINEON/英飞凌
21+
25
询价
INFINEON/英飞凌
标准封装
50054
一级代理原装正品现货期货均可订购
询价
INFINEON
22+
N/A
51800
优势价格原装现货提供BOM一站式配单服务
询价
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
Infineon
22+
NA
493
加我QQ或微信咨询更多详细信息,
询价
更多IPP60R199CPXK供应商 更新时间2024-6-10 14:26:00