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IPI60R099CPA

CoolMOS Power Transistor

Features •WorldwidebestRds,oninTO262 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IIPP60R099CP

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.099Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPW60R099CP

N-ChannelMOSFETTransistor

•DESCRITION •HighPeakCurrentCapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤99mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB60R099CP

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB60R099CP

CoolMOSPowerTransistor

Features •WorldwidebestRds,oninTO263 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •HardswitchingSMPStopologiesfor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB60R099CPA

CoolMOSPowerTransistor

Features •WorldwidebestRds,oninTO263 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R099CP

iscN-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.099Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPI60R099CP

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R099CP

CoolMOSTMPowerTransistor

Features •WorldwidebestRds,oninTO220 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •HardswitchingSMPStopologiesfor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R099CP

Highpeakcurrentcapability

Features •WorldwidebestRds,oninTO220 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP60R099CP

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.099Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPP60R099CP

CoolMOSPowerTransistor

Features •WorldwidebestRds,oninTO220 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •HardswitchingSMPStopologiesfor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP60R099CP

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP60R099CPA

CoolMOSPowerTransistor

Features •WorldwidebestRds,oninTO220 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPW60R099CP

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOSCPisspeciallydesignedfor: •HardswitchingSMPStopologiesfor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPW60R099CP

CoolMOSPowerTransistorFeaturenewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPW60R099CP

N-ChannelMOSFETTransistor

•DESCRITION •HighPeakCurrentCapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤99mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPW60R099CPA

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

详细参数

  • 型号:

    IPI60R099CPA

  • 功能描述:

    MOSFET COOL MOS 600 V .199Ohms

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
2024+实力库存
TO-262
4000
只做原厂渠道 可追溯货源
询价
Infineon(英飞凌)
23+
TO-262
8145
支持大陆交货,美金交易。原装现货库存。
询价
INFINEON
23+
TO262
8653
全新原装优势
询价
INFINEON
23+
TO-262
11846
一级代理商现货批发,原装正品,假一罚十
询价
INFINEON
20+
TO-262
90000
全新原装正品/库存充足
询价
INFINEON
2023+
TO-262
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
INFINEON
21+
TO-262
35200
一级代理/放心采购
询价
INFINEON/英飞凌
2105+
TO-262
9852
只做原装正品现货!或订货假一赔十!
询价
INFINEON
09+PBF
TO-262
4000
现货
询价
Infineon(英飞凌)
2117+
PG-TO262-3
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多IPI60R099CPA供应商 更新时间2024-6-11 9:24:00