首页 >IPF06N03LA>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPF06N03LA | OptiMOS 2 Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDECfortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
IPF06N03LA | OptiMOS 2 Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDECfortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
IPF06N03LA | OptiMOS짰2 Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
OptiMOS짰2 Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
25VN-ChannelEnhancementModeMOSFET | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel20-V(D-S)175CMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel20-V(D-S)175CMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel20-V(D-S)175CMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel20-V(D-S)175CMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel20-V(D-S)175CMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel20-V(D-S)175CMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelLogicLevelEnhancementModePowerMOSFET Description TheMTB06N03Q8isaN-channelenhancement-modeMOSFET,providingthedesignerwiththebest combinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. TheSOP-8packageisuniversallypreferredforallcommercial-industrialsurfacemount | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-Channel20-V(D-S)175CMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TrenchFET짰GenIIIPowerMOSFET | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
N-Channel30-V(D-S)MOSFETHalogen-free | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS25V RDSON(MAX.)6mΩ ID80A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE |
详细参数
- 型号：
IPF06N03LA
- 制造商：
INFINEON
- 制造商全称：
Infineon Technologies AG
- 功能描述：
OptiMOS 2 Power-Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-252-3 |
6000 |
只做原装进口 免费送样!! |
询价 | ||
INFINEON |
22+ |
TO-252 |
200 |
只做原装 |
询价 | ||
INFINEON |
21+ |
TO-252 |
60000 |
原装正品进口现货 |
询价 | ||
INFINEON |
360000 |
原厂原装 |
1305 |
询价 | |||
INFINEON |
2012+ |
TO-252 |
12000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
INFINEON |
07+ |
TO-252 |
36800 |
询价 | |||
INFINEON |
23+ |
SOT-252-3 |
13500 |
专业优势供应 |
询价 | ||
inf原装 |
2022+ |
TO-252 |
5000 |
全现原装公司现货 |
询价 | ||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |
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