IPB65R660CFDXT资料datasheet下载供应代理-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
HCD65R660S	文件：285.62 Kbytes Page：8 Pages	SuperiorAvalancheRuggedTechnology	SEMIHOW SemiHow Co.,Ltd.	SEMIHOW
HCD65R660S	文件：285.62 Kbytes Page：8 Pages	650VN-ChannelSuperJunctionMOSFET	SEMIHOW SemiHow Co.,Ltd.	SEMIHOW
HCS65R660S	文件：188.97 Kbytes Page：7 Pages	SuperiorAvalancheRuggedTechnology	SEMIHOW SemiHow Co.,Ltd.	SEMIHOW
HCU65R660S	文件：285.62 Kbytes Page：8 Pages	650VN-ChannelSuperJunctionMOSFET	SEMIHOW SemiHow Co.,Ltd.	SEMIHOW
IIPD65R660CFD	文件：335.3 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Highcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIPP65R660CFD	文件：338.51 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIPW65R660CFD	文件：334.83 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤660mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPA65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA65R660CFD	文件：269.89 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.66Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB65R660CFD	文件：189.21 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB65R660CFDA	文件：2.34202 Mbytes Page：15 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPD65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPD65R660CFD	文件：335.3 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Highcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPD65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPD65R660CFDA	文件：1.42987 Mbytes Page：14 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

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详细参数

型号：
IPB65R660CFDXT
制造商：
Infineon Technologies AG
功能描述：
MOSFET N-CH 650V 6.0A TO263

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市安富世纪电子有限公司	IPB65R660CFDXT	INFINEON	23+		8000	只做原装现货	询价
深圳市毅创腾电子科技有限公司	IP-B6B-CU	IP	23+	模块	595	全新原装正品,量大可订货!可开17%增值票!价格优势!	询价
瀚佳科技(深圳)有限公司	IP-B6L-CU	IP	17+	MODULE	2100	一级代理/全新原装现货/长期供应!!!	询价
华富测量(深圳)传感技术有限公司	IP-B6L-CU	原厂	2023+	模块	600	专营模块,继电器,公司原装现货	询价
深圳市创新迹电子有限公司	IP-B6L-CU	IP	23+	MODULE	7300	专注配单,只做原装进口现货	询价
深圳市惊羽科技有限公司	IPB6R199P	INFPHIL	24+25+/26+27+	TO-263-3	57500	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
中天科工半导体（深圳）有限公司	IP-B6W-CU	VICOR	专业模块	MODULE	8513	模块原装主营-可开原型号增税票	询价
深圳市亿智腾科技有限公司	IP-B6W-CU	IP	2021+	模块	6430	原装现货/欢迎来电咨询	询价
深圳市科雨电子有限公司	IP-B6W-CU	COMVERTER	18+	MODULE	14	就找我吧!--邀您体验愉快问购元件!	询价
贸泽芯城（深圳）电子科技有限公司	IP-B6W-CU	IP	21+ROHS		10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价

更多IPB65R660CFDXT供应商更新时间2024-6-8 15:00:00

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