首页 >IPB200N25N3>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IPB200N25N3 | OptiMOS3 Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
OptiMOSTM3 Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOSTM3 Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS3 Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS3 Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS3 Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOSTM3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOSTM3Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=64A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V APPLICATIONS ·Idealforhigh-frequencyswitchingandsynchronousrectification | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
OptiMOSTM3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOSTM3Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS3Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号:
IPB200N25N3
- 功能描述:
MOSFET N-channel POWER MOS
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
TO-263 |
1524 |
原厂直供,支持账期,免费供样,技术支持 |
询价 | ||
原装 |
24+ |
标准 |
44198 |
热卖原装进口 |
询价 | ||
Infineon |
23+ |
TO263-3 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
Infineon(英飞凌) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-263 |
12316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
INFINEON |
21+ |
TO-263 |
8230 |
询价 | |||
INFINEON/英飞凌 |
23+ |
TO263-3 |
10000 |
公司只做原装正品 |
询价 | ||
Infineon/英飞凌 |
22+ |
TO263-3 |
6000 |
十年配单,只做原装 |
询价 | ||
Infineon/英飞凌 |
23+ |
TO263-3 |
6000 |
原装正品,支持实单 |
询价 | ||
INFINEON英飞凌 |
22+ |
TO-263 |
10000 |
询价 |
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