IPB144N12N3GXT说明书PDF资料市场行情ISC-114ic电子网

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IPB144N12N3	文件：365.38 Kbytes Page：11 Pages	OptiMOS??Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB144N12N3G	文件：365.38 Kbytes Page：11 Pages	OptiMOS??Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB144N12N3G	文件：188.58 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB144N12N3-G	文件：365.38 Kbytes Page：11 Pages	OptiMOS??Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

更多IPB144N12N3GXT供应商更新时间2024-5-28 11:00:00