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IPB100N10S3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB107N20N3G

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDECfortargetapplication •Halogen-freeaccordingtoIEC6124

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB107N20NA

OptiMOSTM3 Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101 •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhigh-frequency

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB108N15N3

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant;Halogenfree •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB108N15N3G

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant;Halogenfree •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB108N15N3G

Isc N-Channel MOSFET Transistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB108N15N3-G

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant;Halogenfree •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB100N04S2-04

OptiMOS짰 Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB100N04S2L-03

OptiMOS짰 Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB100N04S3-03

OptiMOS-T Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB100N04S4-H2

OptiMOS-T2 Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB100N04S4-H2

OptiMOS짰-T2 Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB100N04S4-H2_12

OptiMOS짰-T2 Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB100N06S2-05

OptiMOS Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB100N06S2L-05

OptiMOS Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB100N06S3-03

OptiMOS짰-T Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB100N06S3-03

OptiMOS-T2 Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB100N06S3-03_07

OptiMOS-T2 Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB100N06S3-04

OptiMOS-T Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB100N06S3L-03

OptiMOS짰-T Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

详细参数

  • 型号:

    IPB10

  • 功能描述:

    MOSFET OptiMOS -T PWR TRANS 100V 100A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON-英飞凌
24+25+/26+27+
TO-263-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
INFINEON
23+
TO263
8000
只做原装现货
询价
INFINEON/英飞凌
24+
TO263
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
INFINEON
08+(pbfree)
PG-TO263-3D2-PAK(T
8866
询价
Infineon
23+
TO-263
7750
全新原装优势
询价
Infineon
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
INFINE0N
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
INFINEON
22+23+
TO-263
12106
绝对原装正品全新进口深圳现货
询价
INFINEON
1822+
TO263-3-
9852
只做原装正品假一赔十为客户做到零风险!!
询价
INFINEON
SOT-263
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
更多IPB10供应商 更新时间2024-6-17 16:16:00