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IPA65R420CFD

650V CoolMOS C6 CFD Power Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA65R420CFD

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA65R420CFD

Isc N-Channel MOSFET Transistor

•FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

65R420

11A竊?50VN-CHANNELMOSFET

KIAGuangdong Keyia Semiconductor Technology Co., Ltd

可易亚半导体广东可易亚半导体科技有限公司

IIPP65R420CFD

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.42Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPW65R420CFD

N-ChannelMOSFETTransistor

•DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤420mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB65R420CFD

650VCoolMOSC6CFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB65R420CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB65R420CFD

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPD65R420CFD

650VCoolMOSC6CFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD65R420CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD65R420CFDA

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI65R420CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI65R420CFD

650VCoolMOSC6CFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI65R420CFD

iscN-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.42Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPP65R420CFD

650VCoolMOSC6CFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP65R420CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP65R420CFD

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.42Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPW65R420CFD

N-ChannelMOSFETTransistor

•DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤420mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPW65R420CFD

650VCoolMOSC6CFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

详细参数

  • 型号:

    IPA65R420CFD

  • 功能描述:

    MOSFET CoolMOS 650V 420mOhm CFD2 N-Chan MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
24+
TO-220F
10000
只做原装欢迎含税交易,假一赔十,放心购买
询价
INFINEON/英飞凌
2021+
TO-220F
18529
原装进口假一罚十
询价
INFINEON/英飞凌
2024+实力库存
TO-220F
308
只做原厂渠道 可追溯货源
询价
INFINEON/英飞凌
21+
to-220
60000
原装正品进口现货
询价
INFINEON/英飞凌
2021+
TO-220F
12000
勤思达 只做原装 现货库存
询价
Infineon(英飞凌)
23+
NA
7000
工厂现货!原装正品!
询价
INFINEON/英飞凌
2021+
TO-220F
9000
原装现货,随时欢迎询价
询价
INFINEON/英飞凌
21+23+
TO-220F
6499
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
Infineon(英飞凌)
23+
TO-220FP
8145
支持大陆交货,美金交易。原装现货库存。
询价
INFINEO
2016+
TO-220F
6528
房间原装进口现货假一赔十
询价
更多IPA65R420CFD供应商 更新时间2024-5-31 15:40:00