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RGTV00TK65DGC11 RGTV00TK65GVC11 有现货 可添加我们联系方式获取最优惠价格
原厂原包原标原装每一片都来自正规渠道每一片都可追溯
类别 分立半导体产品
晶体管 - UGBT，MOSFET - 单
制造商 Rohm Semiconductor
IGBT 类型 沟槽型场截止
电压 - 集射极击穿（最大值） 650V
电流 - 集电极（Ic）（最大值） 45A
脉冲电流 - 集电极 (Icm) 200A
不同 Vge，Ic 时的 Vce（on） 1.9V @ 15V，50A
功率 - 最大值 94W
开关能量 1.17mJ（开），940μJ（关）
输入类型 标准
栅极电荷 104nC
25°C 时 Td（开/关）值 41ns/142ns
测试条件 400V，50A，10 欧姆，15V
反向恢复时间（trr） 102ns
工作温度 -40°C ~ 175°C（TJ）
安装类型 通孔
封装/外壳 TO-3PFM，SC-93-3
供应商器件封装 TO-3PFM
ROHMs 650 V IGBTs combine class-leading low conduction loss with high-speed switching characteristics. This makes them ideal for power conversion in general-purpose inverters and_converters for consumer appliances， such as ACs and_induction heaters (IH)， as well as industrial equipment， including power conditioners， welding machines， and_uninterrupted power supplies (UPS). A total of 21 models are offered， cnsisting of the RGTV series， which features short-circuit tolerance， and_the RGW series that delivers fast switching speed.
In recent years， the emergence of IoT has caused exponential growth in the volume of data generated， bringing about a need to improve the functionality and_capacity of data centers. However， as the number of servers and_UPS essential to ensuring stable operation of the main power supply continues to rise， it becomes increasingly difficult to reduce power consumption. In addition， in high power applications that utilize IGBTs， there is a need to maintain reliability by simplifying measures against overshoot during switching， which can lead to device failure or malfunction.
In response， ROHM utilized thin wafer technology and_a proprietary structure to deliver class-leading performance that optimizes the trade-off relationship between conduction loss and_switching speed. For example， when used in an interleaved PFC circuit， efficiency is improved by 1.2%_at light loads and_0.3%_under heavy loads， contributing to lower application power consumption. In addition， optimizing the internal design allowed ROHM to achieve smooth switching characteristics that decrease voltage overshoot by 50%_compared to products with equivalent efficiency， reducing the number of parts required along with design load.
Features
Combines industry-low conduction loss with high-speed switching characteristics
These two series adopt thin wafer technology that reduces wafer thickness by 15%_over conventional products and_an original structure featuring a refined cell design to provide the industrys lowest conduction loss (VCE(sat)=1.5 V) with fast switching characteristics (tf=30 to 40 ns)
Lineup
RGTV series features a short-circuit resistance of 2 μs
Fast-switching RGW series ensures support for a broader range of applications
Enables soft switching operation， reducing design load
Internal device optimization makes it possible to achieve soft switching for smooth ON/OFF operation. This decreases voltage overshoot during switching by as much as 50%_over conventional products， reducing the number of external parts required， such as gate resistors and_snubber circuits used to control overshoot. As a result， ROHMs IGBTs eliminate the need for overshoot countermeasures on the application side， minimizing design load
RGTV00TK65DGC11
RGTV00TK65GVC11
RGTV00TS65DGC11
RGW00TK65DGVC11
RGW00TK65GVC11
RGW00TS65DGC11
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