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YMBOLPARAMETERCONDITIONSMIN.MAX.UNIT

Pertransistor;forthePNPtransistorwithnegativepolarity

VCBOcollector-basevoltageopenemitter?50V

VCEOcollector-emittervoltageopenbase?45V

VEBOemitter-basevoltageopencollector?5V

ICcollectorcurrent(DC)?500mA

ICMpeakcollectorcurrent?1A

IBMpeakbasecurrent?200mA

PtottotalpowerdissipationTamb≤25°C;note1?370mW

Tstgstoragetemperature?65+150°C

Tjjunctiontemperature?150°C

Tamboperatingambienttemperature?65+150°C

Perdevice

PtottotalpowerdissipationTamb≤25°C;note1?600mW

Tamb25°Cunlessotherwisespecified.

Notes

1.Pulsetest:tp≤300μs;δ≤0.02.

2.VBEdecreasesbyapproximately?2mV/Kwithincreasingtemperature.

SYMBOLPARAMETERCONDITIONSVALUEUNIT

Rthj-athermalresistancefromjunctionto

ambient

note1208K/W

SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT

Pertransistorunlessotherwisespecified;forthePNPtransistorwithnegativepolarity

ICBOcollector-basecut-offcurrentVCB20V;IE0??100nA

VCB20V;IE0;Tj150°C??5μA

IEBOemitter-basecut-offcurrentVEB5V;IC0??100nA

hFEDCcurrentgainVCE1V;IC100mA;note1160?400

VCE1V;IC500mA;note140??

VCEsatcollector-emittersaturationvoltageIC500mA;IB50mA;note1??700mV

VBEbase-emittervoltageVCE1V;IC500mA;

notes1and2

??1.2V

NPNtransistor

CccollectorcapacitanceVCB10V;IEIe0;f1MHz?5?pF

fTtransitionfrequencyVCE5V;IC10mA;

f100MHz

100??MHz

PNPtransistor

CccollectorcapacitanceVCB?10V;IEIe0;f1MHz?9?pF

fTtransitionfrequencyVCE?5V;IC?10mA;